In today’s power electronics, advanced components that provide isolated power for gate drivers of switching devices like Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) are necessary to help ensure efficient and reliable operation. Gate driver transformers are known as effective isolated power solutions in applications such as switched-mode power supplies, motor drives, renewable energy systems, and automotive traction inverters. An excellent example of a purpose-built gate driver transformer is Bourns® Model HVMA03F4A-LP8S transformer. A recent application note entitled, “Implementing Bourns® Model HVMA03F4A-LP8S Transformer for Isolated Power in Gate Driver Applications” details the features and capabilities that make these transformers optimal for such purposes.

Gate Driver Voltage Requirements

IGBT and SiC gate drivers typically require gate voltages ranging from +15 V to +20 V for turn-on and 0 V to -5 V for reliable turn-off. Employing a negative gate voltage enhances noise immunity, facilitates faster charge extraction from the gate, and prevents false turn-on events in half-bridge configurations. To meet these requirements, a gate driver transformer capable of delivering 2 W or more is highly recommended.

Feature Advantages That Make a Difference

Specifying an advanced gate driver transformer delivers multiple advantages while meeting essential requirements. An optimal choice is the Bourns® Model HVMA03F4A-LP8S AEC-Q200 compliant, automotive-grade driver transformer, which is designed to provide efficient and reliable isolated power in high-voltage applications. This model offers many feature benefits:

• Power Rating: Capable of delivering 2 W of power.
• High Working Voltage: Supports up to 800 V, making it suitable for applications requiring high isolation voltage.
• Creepage Distance: Offers an 8 mm creepage distance, enhancing safety and reliability.
• Operating Temperature Range: Operates effectively between -40 °C to +125 °C, accommodating a wide range of environmental conditions.
• Compact Design: Features a low-profile surface-mount package, facilitating integration into space-constrained designs.

Test Setup and Performance

To evaluate the performance of its Model HVMA03F4A-LP8S transformer, Bourns conducted tests using a Texas Instruments UCC25800 low-EMI transformer driver IC, configured to operate at 1 MHz. The setup generated a dual output of +16 V and -4 V, suitable for bipolar driving of switching devices. Tests demonstrated that the transformer was able to deliver approximately 4.4 W of power with a surface temperature rise of approximately 45 °C. The results indicated that it met the level of efficient performance within its specified operating conditions.

Conclusion

The features designed into the Bourns® Model HVMA03F4A-LP8S transformer capably provide an effective solution for delivering isolated power to gate drivers in various high-voltage applications. Read the Bourns application note to get more information about this model’s combination of high-power delivery, compact design, and automotive grade compliance. See for yourself all the reasons it is an ideal choice to help increase safe operation while preventing damage to sensitive electronic components.